“Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue on Si by Using an O2 Plasma Treatment“
- Journal
- Journal of the Korean Physical Society
- Volume, Page (Number)
- Vol 53(3), p.1675-1679
- Year
- 2008
- File
- 213.pdf (877.2K) 0회 다운로드 DATE : 2023-05-03 15:20:34