“Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue on Si by Using an O2 Plasma Treatment“

Journal

Journal of the Korean Physical Society

Author

K. S. Min, B. J. Park, S. W. Kim and S. K. Kang

Volume, Page (Number)

Vol 53(3), p.1675-1679

Year

2008

File

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