목록 “Effective sulfur passivation of an n-type GaN surface by an alcoholic-based sulfide solution“ Journal J. Appl. Phys Author C. Huh, S.-W. Kim, H. Kim, I.-H. Lee, and S.-J. Park Volume, Page (Number) 87, 4591 Year 2008~ File 2.pdf (54.9K) 0회 다운로드 DATE : 2023-05-03 15:39:10 이전글“InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN“ 23.05.03 다음글“Electromigration-induced failure of GaN multi-quantum well light emitting diode“ 23.05.03