목록 “Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma“ Journal J. Appl. Phys Author J.-M. Lee, K.-M. Chang, S.-W. Kim, C. Huh, I.-H. Lee, and S.-J. Park Volume, Page (Number) 87, 7667 Year 2008~ Memo 87, 7667 (2000) File 4.pdf (184.8K) 1회 다운로드 DATE : 2023-05-03 15:40:21 이전글“Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment“ 23.05.03 다음글“InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN“ 23.05.03
