목록 "Dry etch of GaN/InGaN multi-quantum wells using inductively coupled Cl2/CH4/H2/Ar plasma“ Journal J. Electrochem. Soc Author J.-M. Lee, S.-W. Kim, and S.-J. Park Volume, Page (Number) 148, G254 Year 2008~ File 7.pdf (143.8K) 1회 다운로드 DATE : 2023-05-03 15:42:50 이전글“Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes“ 23.05.03 다음글“Modeling of a GaN-based light emitting diode for uniform current spreading“ 23.05.03
