“Roles of the ZnO buffer layer to the properties of ZnO on Si substrates grown by metalorganic vapor phase epitaxy“

Journal

Institute of Physics Conference Series

Author

S.-W. Kim, K. Ogata, K. Maejima, Sz. Fujita, and Sg. Fujita

Volume, Page (Number)

No.170, pp.671-675

Year

2008~

Memo

 

• 이전글“ZnO growth on Si substrates by metalorganic vapor phase epitaxy“ 23.05.03
• 다음글“Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN“ 23.05.03