목록 “Suppression of leakage current in InGaN/GaN multiple-quantum well LEDs by N2O plasma treatment“ Journal Electrochem. Solid State Lett Author H.-M. Kim, C. Huh, S.-W. Kim, N.-M. Park, and S.-J. Park Volume, Page (Number) 7, G241 Year 2008~ File 19.pdf (240.6K) 2회 다운로드 DATE : 2023-05-03 16:53:41 이전글“Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition“ 23.05.03 다음글“Focused ion beam patterning for fabrication of periodical two-dimensional Zinc Oxide nanodot arrays“ 23.05.03
