“High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing“

Journal

J. Appl. Phys

Author

K.-K. Kim, S. Niki, J.-Y. Oh, J.-O Song, T.-Y. Seong, and S.-J. Park, Sz. Fujita, and S.-W. Kim

Volume, Page (Number)

97, 066103

Year

2008~

File

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